Non-UV Photoelectric Properties of the Ni/n-Si/N+-SiC Isotype Heterostructure Schottky Barrier Photodiode

The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N+-SiC isotype heterostructure Schottky photodiode are simulated by using Silvaco-Atlas. There are energy offsets in the conduction and valance band of the heterojunction, which are about 0.09 eV and 1.79 eV, respectively. The non-UV photodiode with this structure is fabricated on a 6 H-SiC(0001) substrate. J-V measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5 V, and the turn-on voltage is about 0.7 V. Under non-ultraviolet illumination of 0.6 W/cm(2), the device demonstrates a significant photoelectric response with a photocurrent density of 2.9 mA/cm(2) and an open-circuit voltage of 63.0 mV. Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.