期刊
CHINESE PHYSICS LETTERS
卷 29, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/29/2/027801
关键词
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资金
- National Natural Science Foundation of China [10904008]
- NSAF Joint Foundation of China [11076008]
- Foundation for Young Scholars of University of Electronic Science and Technology of China [L08010401JX0806]
- Key Development Foundation of China Academy of Engineering Physics [2009A08002]
Anatase TiO2 films are deposited on glass substrates at different oxygen partial pressures of 0.8-1.6Pa. Room temperature N ion implantation is conducted in the films at ion fluences up to 5 x 10(17) ions/cm(2). UV-visible absorption and photoluminescence (PL) are investigated. With the increase of N ion fluences, the band gap of TiO2 decreases and the absorbance increases. X-ray photoelectron spectroscopy (XPS) confirms the formation of O-Ti-N nitride after implantation, resulting in the red shift of the band gap. The PL intensity of the deposited films increases with the increasing oxygen partial pressure and decreases remarkably due to the irradiation defects induced by ion implantation.
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