Article
Materials Science, Ceramics
Z. M. H. El-Qahtani, Medhat A. El-Hadek, Maged F. Alotaibi, P. Petkov, A. M. Adam
Summary: Thin layers of Bi2-chalcogenides were evaporated on glass substrates using vacuum thermal evaporation, and their properties were enhanced through annealing. The crystal size increased while micro-strain and dislocation density decreased. Annealing also resulted in notable changes in optical band gap and transmittance.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
Fouaz Lekoui, Rachid Amrani, Walid Filali, Elyes Garoudja, Lyes Sebih, Imad Eddine Bakouk, Hocine Akkari, Salim Hassani, Nadia Saoula, Slimane Oussalah, Hind Albalawi, Nourah Alwadai, Mohamed Henini
Summary: Control of optical properties of ZnO nanostructured thin films using different dopant elements was studied, unveiling the effects of annealing temperature on structural, morphological changes and optical properties. XRD, XPS, FIB-SEM, and Raman spectroscopy were employed, showing that annealing led to the formation of nanoneedles structures and variations in optical transmission and bandgap.
Article
Chemistry, Analytical
Qijing Lin, Fuzheng Zhang, Na Zhao, Ping Yang
Summary: Two sandwiched ZnO/Metal/ZnO transparent conductive thin films with different intermediate layers were fabricated using magnetron sputtering technology. Comparative analysis showed that the addition of a Ti layer improved the overall properties of the ZnO(Ti/Cu) film compared to the ZnO(Cu) film with the same metal layer thickness. The effect of annealing temperature was also studied, revealing that although the carrier concentration did not always increase with temperature, the sheet resistances decreased due to increased mobility. The transmittance of ZnO(Cu) films increased with annealing temperature, while that of ZnO(Ti/Cu) films initially increased and then decreased. The optical band gap of ZnO(Cu) films increased with temperature, but was lower than that of ZnO(Ti/Cu) films, which first increased and then decreased. The figure of merit for the ZnO(Ti/Cu) film was better, indicating that its overall performance was superior, and annealing improved the performance of the film systems.
Article
Chemistry, Physical
Quang Chieu Bui, Bassem Salem, Herve Roussel, Xavier Mescot, Youssouf Guerfi, Carmen Jimenez, Vincent Consonni, Gustavo Ardila
Summary: High temperature annealing under oxygen atmosphere has significant effects on the structure and properties of ZnO thin films, leading to improvements in grain boundary velocity and piezoelectric amplitude, ultimately enhancing the piezoelectric performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Instruments & Instrumentation
Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, Yun-Hwei Shen
Summary: The Zr-doped ZnO (ZZO) thin films deposited on glass substrates and annealed at 400 degrees C exhibited the lowest resistivity, highest mobility, carrier concentration, transmittance, and energy gap among the tested films, making them promising for use as stable photosensors.
SENSORS AND MATERIALS
(2021)
Article
Physics, Condensed Matter
Emre Sener, Ozkan Bayram, Ugur Cem Hasar, Onder Simsek
Summary: The annealing temperature significantly affected the crystallite size and optical transmittance of ZnO thin films, with the crystallite size decreasing as the temperature increased. The transmittance of ZnO thin films ranged from 85% to 95% at a wavelength of 550 nm.
PHYSICA B-CONDENSED MATTER
(2021)
Article
Materials Science, Multidisciplinary
Md Abu Sayeed, Hasan Khaled Rouf
Summary: The impacts of Al doping and annealing temperature on the structural, optical, and electrical properties of Sn1-xO2:Al-x thin films were investigated. High temperature annealing improved crystallinity and reduced defects, while Al doping decreased carrier mobility and concentration.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2021)
Article
Materials Science, Multidisciplinary
Weon Cheol Lim, Jitendra Pal Singh, Younghak Kim, Jonghan Song, Keun Hwa Chae, Tae-Yeon Seong
Summary: The study shows that thermal annealing significantly affects the properties of zinc oxide thin films, including relaxation of stress, variation in optical band-gap, and occurrence of vacancies and defects. These changes are revealed through X-ray techniques, providing a better understanding of the performance changes in zinc oxide films.
Article
Materials Science, Multidisciplinary
Seval Aksoy Pehlivanoglu, Ozgur Polat
Summary: ZnO and Ir-doped ZnO thin films were fabricated by sol-gel spin coating technique. The structures and properties of the films were investigated. The addition of Ir increased the volume of the unit cell, atomic packing fraction, and grain size of the thin films. Optical bandgap decreased with Ir substitution. The transmittance and optical dielectric properties were also affected by Ir doping.
Article
Metallurgy & Metallurgical Engineering
Emine Guneri, Johnson Henry, Fatma Gode, Nilgun Kalaycioglu Ozpozan
Summary: Pure ZnO and Mn-doped ZnO thin films were prepared by chemical bath deposition method with various Mn doping concentrations. The structural, morphological, and optical properties of the films were analyzed using different techniques. XRD analysis revealed hexagonal structured ZnO in all films, with a peak shift observed in Mn-doped films. The crystallite size increased with Mn doping. The surface morphology of Mn-doped films exhibited irregularly shaped agglomerated particles. The transmittance spectra showed higher transmittance in the visible region, which decreased with Mn doping, indicating increased optical absorption. The band gap of Mn-doped films decreased with Mn doping. Mn-doped films exhibited higher optical and electrical conductivity in the UV region.
JOURNAL OF CENTRAL SOUTH UNIVERSITY
(2023)
Article
Materials Science, Ceramics
Prashant Thapliyal, Alok S. Kandari, Vijendra Lingwal, N. S. Panwar, G. Mohan Rao
Summary: The study investigated the characteristics of (Ta2O5)1-x- (TiO2)x (TTOx) thin films prepared with different compositions and annealing temperatures, revealing that the film with x = 0.06 and annealed at 700°C exhibited the highest dielectric constant and lower leakage current density, making it suitable for high-density silicon memory devices.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
B. Sharmila, Monoj Kumar Singha, Priyanka Dwivedi
Summary: This paper explores the impact of annealing on the morphology, structure, and optical properties of Zinc Oxide (ZnO) thin films, as well as their application in optical sensing. ZnO thin films were deposited using radio frequency sputtering technique and annealed at different temperatures. The annealing process was found to improve the crystalline structure and optical response of the thin films. The optimized annealed sample demonstrated significantly improved photo to dark current ratio (PDCR) and showed potential for UV range optical applications.
MICROELECTRONICS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Mansoure Ilkhani, Laya Dejam
Summary: Nickel-doped zinc oxide thin films were deposited on quartz substrates using RF magnetron sputtering, and the effects of annealing temperatures on their properties were investigated. The films exhibited a wurtzite crystalline phase, with the crystallites oriented towards the (002) direction. The optical band-gap values of the Ni:ZnO thin films decreased with increasing annealing temperature, showing a linear relationship with tail width.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Physical
Chenlin Wang, MinJu Ying, Jie Lian, MingYang Wei, Qingfen Jiang, Zhen Xu, Yu Zhang, Yueming Wang
Summary: In this work, ion implantation of Mn and As ions into ZnO films significantly altered their optical properties, leading to changes in refractive index and extinction coefficient. The presence of Mn ions also introduced a halfmetallic property to the ZnO films, resulting in gentler variations in optical characteristics. These findings suggest new possibilities for the design and optimization of optoelectronic devices utilizing ZnO thin films with semi-metallic properties.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Sukru Cavdar, Yasemin Sahin, Neslihan Turan, Haluk Koralay, Nihat Tugluoglu
Summary: In this study, undoped and Cd-doped ZnO thin films were prepared using the SILAR technique and their structural and electrical properties were analyzed. The results showed that the thin films had a hexagonal wurtzite structure and the electrical properties varied with the amount of Cd dopant. Additionally, p-n junction diode structures were created to study the light sensitivity and photoresponse characteristics of the films. The findings are important for the design and fabrication of photodiodes in optoelectronic applications.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
