4.5 Review

Topological insulator nanostructures and devices

期刊

CHINESE PHYSICS B
卷 22, 期 9, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/22/9/096104

关键词

topological insulators; nanostructures; quantum spin Hall effect; Aharonov-Bohm effect

资金

  1. National Young 1000 Talents Plan of China
  2. Pu Jiang Talent Plan in Shanghai City, China

向作者/读者索取更多资源

Topological insulators' properties and their potential device applications are reviewed. We also explain why topological insulator (TI) nanostructures are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to exploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.

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