Article
Materials Science, Ceramics
Pavel V. Krasovskii, Alexey M. Lebedev
Summary: The surface chemistry of a plasma SiC nanopowder was characterized using X-ray photoelectron spectroscopy. The results showed surface enrichment of silica and sp2-bonded elemental carbon, with varying oxidation depths.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Physical
Yifan Xiao, Xiaoxi Li, Hehe Gong, Wenjun Liu, Xiaohan Wu, Shijin Ding, Hongliang Lu, Jiandong Ye
Summary: In this study, the NiOx/β-Ga2O3 heterojunction with F plasma pre-treatment showed improved performance, including reduced reverse current, increased on-current, and improved on-resistance. The observation of restored electrical properties and enhanced temperature stability after thermal cycling suggests great potential for enhancing the performance of gallium oxide-based heterojunctions.
APPLIED SURFACE SCIENCE
(2022)
Article
Physics, Multidisciplinary
Huili Zhu, Zifan Hong, Changjie Zhou, Qihui Wu, Tongchang Zheng, Lan Yang, Shuqiong Lan, Weifeng Yang
Summary: The interfacial properties of MoS2/4H-SiC heterostructures were studied, and it was found that the valence band offsets increased with increasing MoS2 layer. A strong interlayer interaction was revealed at the 1L MoS2/SiC interface, while Fermi level pinning and surface passivation were achieved at the 4H-SiC (0001) surface. In multilayer MoS2, weak vdW interaction and strong interlayer orbital coupling resulted in type II band alignment and enlarged CBOs and VBOs, while in 1L MoS2/SiC, type I band alignment and asymmetric CBO and VBO were observed.
FRONTIERS OF PHYSICS
(2023)
Article
Chemistry, Physical
Fanzhengshu Wu, Jie Zhang, Wei Xi, Yan-Qing Chi, Qi-Bin Liu, Lei Yang, Hong -Ping Ma, Qing-Chun Zhang
Summary: This study investigated the effects of Al implantation in 4H-SiC at a dose of 1 x 1014 cm-2. Both experimental and theoretical methods were used to study the impacts of implantation temperature on lattice quality, microstructure, surface composition, and band structure. The results revealed differences in surface morphology, lattice damage recovery after post-annealing, and oxidation effects during and after the implantation process. These findings provide insights into the effect mechanism and contribute to further research and applications.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy, Sukwon Choi
Summary: Ultra-wide band gap semiconductor devices based on fi-phase gallium oxide (Ga2O3) offer higher switching performance, efficiency, and lower manufacturing cost compared to current wide band gap power electronics. However, overheating remains the major challenge for the commercialization of Ga2O3 electronics, affecting device performance and reliability. By fabricating a Ga2O3/4H-SiC composite wafer and implementing a low-temperature epitaxy and device processing scheme, we achieved high thermal performance and a power figure of merit of 300 MW/cm2 in Ga2O3 devices, the highest reported thus far. Thermally optimized Ga2O3/diamond composite wafers with reduced Ga2O3 thickness and thinner bonding interlayers show potential for further reduction in device thermal impedance.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Yi Shen, Hong-Ping Ma, Lin Gu, Jie Zhang, Wei Huang, Jing-Tao Zhu, Qing-Chun Zhang
Summary: In this work, atomic level doping of Sn into Ga2O3 films was achieved using a plasma-enhanced atomic layer deposition method. The study investigated the effects of doping on the chemical state, microstructure, optical properties, energy band alignment, and electrical properties of the films. The results provide valuable insights for the design and application of Ga2O3 film-based transparent devices.
Article
Chemistry, Physical
Junhua Yin, Daihua Chen, Hong Yang, Yao Liu, Devki N. Talwar, Tianlong He, Ian T. Ferguson, Kaiyan He, Lingyu Wan, Zhe Chuan Feng
Summary: A comprehensive spectroscopic study was conducted on MOCVD-grown AlN thin films on sapphire and 6H-SiC substrates. The results showed better crystalline quality for AlN films on 6H-SiC compared to those on Al2O3. The study also revealed significant influence of the substrate on surface roughness and crystal quality of the films.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Yuxin Deng, Ziqi Yang, Tongling Xu, Huaxing Jiang, Kar Wei Ng, Chao Liao, Danni Su, Yanli Pei, Zimin Chen, Gang Wang, Xing Lu
Summary: Due to the difficulty of p-type doping in beta-Ga2O3, the NiO/beta-Ga2O3 heterojunction is considered as a promising candidate for bipolar devices. In this study, the band alignment and electrical properties of NiO/beta-Ga2O3 heterojunctions with different beta-Ga2O3 orientations were comparatively studied. It was found that there is a type-II band alignment between NiO and beta-Ga2O3, and the valence band offsets and conduction band offsets vary with different substrate orientations. The influence of substrate orientations on the properties of NiO/beta-Ga2O3 heterojunctions is of great importance for the design and optimization of beta-Ga2O3-based heterojunction devices.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
R. Garza-Hernandez, H. J. Edwards, J. T. Gibbon, M. R. Alfaro-Cruz, V. R. Dhanak, F. S. Aguirre-Tostado
Summary: Cu2SnS3 thin films were synthesized using two different routes in an aprotic media. Controlling the sulfurization temperature allowed for the presence of diverse crystalline structures of Cu2SnS3. XPS measurements confirmed the presence of Sn4+ and Cu+ species, while bandgap values varied with different crystal phases. The films showed photoconductive properties, making them a potential option for solar applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Anu Baby, Guillaume Marcaud, Yannick J. Dappe, Marie D'Angelo, Jean-Louis Cantin, Mathieu G. Silly, Guido Fratesi
Summary: This study investigates the adsorption behavior of phthalocyanine (H2Pc) molecules on the 6H-SiC(0001)-(3 x 3) surface, proposing a new adsorption model Si-phthalocyanine (SiPc) that is both energetically more stable and shows better agreement between experimental and simulated spectra, suggesting the potential for on-surface synthesis of SiPc molecules on this surface.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
Review
Chemistry, Physical
Ingo Fischer, Patrick Hemberger
Summary: The electronic structure of biradicals, which have two unpaired electrons in degenerate or near-degenerate molecular orbitals, is of great interest in understanding their chemistry. However, the study of these highly reactive species is challenging, as they are difficult to generate cleanly and can only be studied in specific conditions. Recent advances in photoelectron photoion coincidence (PEPICO) spectroscopy and vacuum ultraviolet (VUV) synchrotron radiation have provided valuable insights into the electronic structure of biradicals and biradicaloids.
Article
Chemistry, Physical
Marius Gerlach, Sophie Monninger, Domenik Schleier, Patrick Hemberger, James T. Goettel, Holger Braunschweig, Ingo Fischer
Summary: The investigation using synchrotron radiation on NCl3 and NCl2 revealed that the mass selected threshold photoelectron spectrum of NCl3 is broad and unstructured, while NCl2 exhibits an extended vibrational progression with a specific spacing after photolysis.
Article
Chemistry, Physical
Jianjun Shi, Hongwei Liang, Xiaochuan Xia, Qasim Abbas
Summary: In this study, single-oriented CuGaO2 films were successfully grown on beta-Ga2O3 substrate. Investigation of energy band offsets and alignment at CuGaO2/beta-Ga2O3 heterojunction revealed a type-II band alignment. The prepared CuGaO2/beta-Ga2O3 heterojunction-based ultraviolet photodetector exhibited a significant ultraviolet photoresponse at zero bias voltage, showing potential for future self-power deep UV optoelectronic devices facilitated by the combination of beta-Ga2O3 and wide bandgap delafossite oxide semiconductor.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Haidong Yuan, Jie Su, Pengliang Zhang, Zhenhua Lin, Jincheng Zhang, Jie Zhang, Jingjing Chang, Yue Hao
Summary: The optoelectronic properties of beta-Ga2O3/Janus-TMD heterostructures were investigated with different E(in)s, revealing the impact of E-in direction on band alignments and providing guidance for designing high-performance Ga2O3 optoelectronic devices.
MATERIALS TODAY PHYSICS
(2021)
Article
Thermodynamics
Jeremy Bourgalaisa, Caroline Smith Lewin, Olivier Herbinet, Gustavo A. Garcia, Philippe Arnoux, Luc-Sy Tran, Guillaume Vanhove, Laurent Nahon, Frederique Battin-Leclerc
Summary: Understanding the chemical reactions during the low-temperature oxidation of alkenes is crucial for advanced energy conversion devices. The oxidation of 1-hexene was studied using PEPICO spectroscopy, and the results revealed discrepancies between the predictions of kinetic models and experimental observations, particularly in the formation of hydroxyl ketohydroperoxides.
COMBUSTION AND FLAME
(2023)
