期刊
CHINESE PHYSICS B
卷 20, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/20/11/116803
关键词
modeling; ZnO thin film transistor; deep state; band tail
资金
- Fundamental Research Funds for the Central Universities, China [K50510250001]
We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.
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