期刊
CHINESE PHYSICS B
卷 20, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/20/3/037306
关键词
indium doped zinc oxide thin film; ultrasonic spray pyrolysis; double-layer structure; solar cell
资金
- Hi-Tech Research and Development Program of China [2007AA05Z436, 2009AA050602]
- Science and Technology Support Project of Tianjin [08ZCKFGX03500]
- National Basic Research Program of China [2011CB201605, 2011CB201606]
- National Natural Science Foundation of China [60976051]
- International Cooperation Project between China-Greece Government [2009DFA62580]
- Program for New Century Excellent Talents in University of China [NCET-08-0295]
Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 x 10(-3) Omega . cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58 x 10(-3) Omega . cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.
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