4.2 Article

Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

期刊

CHINESE JOURNAL OF CHEMICAL PHYSICS
卷 27, 期 6, 页码 653-658

出版社

CHINESE PHYSICAL SOC
DOI: 10.1063/1674-0068/27/06/653-658

关键词

Defective graphene nanoribbon; Electronic structure; Spin-polarized transport property; Negative differential resistance; Spin-filtering

资金

  1. National Natural Science Foundation of China [20903003, 21273208]
  2. Anhui Provincial Natural Science Foundation [1408085QB26]
  3. China Postdoctoral Science Foundation [2012M511409]
  4. Supercomputer Center of Chinese Academy of Sciences
  5. University of Science and Technology of China and Shanghai Supercomputer Centers

向作者/读者索取更多资源

We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green's function technique. We observe robust negative differential resistance (NDR) effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands are responsible for the observed NDR phenomenon. In addition, the obvious difference of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogen-vacancy defects hold great potential for building molecular devices.

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