4.8 Article

Origin of the Bipolar Doping Behavior of SnO from X-ray Spectroscopy and Density Functional Theory

期刊

CHEMISTRY OF MATERIALS
卷 25, 期 15, 页码 3114-3123

出版社

AMER CHEMICAL SOC
DOI: 10.1021/cm401343a

关键词

SnO; doping; transparent semiconducting oxides; electronic structure

资金

  1. Integrated Electronics Engineering Center (IEEC) at the State University of New York at Binghamton
  2. New York State Foundation for Science, Technology, and Innovation (NYSTAR)
  3. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DEAC02-98CH10886]
  4. National Institute of Standards and Technology
  5. Faculty/Student Research Support Program at the NSLS
  6. Analytical and Diagnostics Laboratory Small Grant program at Binghamton University
  7. EPSRC [EP/F067496]
  8. Ramsay Memorial Trust
  9. University College London for the provision of a Ramsay Fellowship
  10. Department of Energy [DE-FG02-98ER45680]
  11. EPSRC [EP/F067496/1] Funding Source: UKRI
  12. Engineering and Physical Sciences Research Council [EP/F067496/1] Funding Source: researchfish

向作者/读者索取更多资源

The origin of the almost unique combination of optical transparency and the ability to bipolar dope tin monoxide is explained using a combination of soft and hard Xray photoemission spectroscopy, O K-edge X-ray emission and absorption spectroscopy, and density functional theory calculations incorporating van der Waals corrections. We reveal that the origin of the high hole mobility, bipolar ability, and transparency is a result of (i) significant Sn 5s character at the valence band maximum (due to O 2p-Sn Ss antibonding character associated with the lone pair distortion), (ii) the combination of a small indirect band gap of similar to 0.7 eV (Gamma-M) and a much larger direct band gap of 2.6-2.7 eV, and (iii) the location of both band edges with respect to the vacuum level. This work supports Sn2+-based oxides as a paradigm for next-generation transparent semiconducting oxides.

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