☆ 4.8 Article

Extensive Series of Hexagonal and Orthorhombic RMnO3 (R = Y, La, Sm, Tb, Yb, Lu) Thin Films by Atomic Layer Deposition

CHEMISTRY OF MATERIALS (2011)

期刊

CHEMISTRY OF MATERIALS

卷 23, 期 7, 页码 1835-1840

出版社

AMER CHEMICAL SOC

DOI: 10.1021/cm103480d

关键词

atomic layer deposition; thin films; ternary manganese oxides; crystal structure; magnetic property

类别

Chemistry, Physical Materials Science, Multidisciplinary

资金

Academy of Finland [116254, 126528]
Finnish Foundation for Technology Promotion
Academy of Finland (AKA) [126528, 116254, 126528, 116254] Funding Source: Academy of Finland (AKA)

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摘要

Atomic layer deposition (ALD) with subsequent annealing in N-2 gas flow was employed to fabricate an extensive series of both hexagonal and orthorhombic rare-earth manganate RMnO3 thin films using R(thd)(3), Mn(thd)(3), and ozone as precursors. Excellent control of the R/Mn stoichiometry was achieved for all the rare-earth constituents studied at 275 degrees C. The formation of the metastable perovskites was elegantly enhanced through depositions on coherent perovskite substrates resulting in a complete series (from R = La to Lu) of single-phase RMnO3 perovskites on LaAlO3 substrates. The magnetic properties of the perovskite series exhibited expected antiferromagnetic behaviour at low temperatures (except for R = La which showed ferromagnetic interactions due to cation vacancies).

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