4.8 Article

Self-Assembly of SrTiO3(001) Chemical-Terminations: A Route for Oxide-Nanostructure Fabrication by Selective Growth

期刊

CHEMISTRY OF MATERIALS
卷 21, 期 12, 页码 2494-2498

出版社

AMER CHEMICAL SOC
DOI: 10.1021/cm900540z

关键词

-

资金

  1. Ministerio de Ciencia e Innovacion
  2. Spanish Government Projects [MAT2007-62732, MAT2008-06761-C03, MAT2008-62732]
  3. NANOSELECT [CSD2007-00041]
  4. European Union [FP6-03321]

向作者/读者索取更多资源

We report a method to fabricate functional oxide nanostructures ordered over the centimeter scale. Self-assembly of SrTiO3(001) chemical terminations through appropriate thermal processing leads to large-area chemical nanopattering of the surface. Such nanopatterned surfaces, stable at relatively high temperature, can be used as template to grow functional ordered nanostructures, exploiting the termination-dependent nucleation. As an example of this potential, we have fabricated ordered arrays of conducting epitaxial SrRuO3 nanostripes separated by insulating trenches. Conductivity maps by atomic force microscopy confirm the coexistence of sharp conducting/insulating regions in low-dimensional structures.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Materials Science, Multidisciplinary

Low-Cost and Biodegradable Thermoelectric Devices Based on van der Waals Semiconductors on Paper Substrates

Gulsum Ersu, Carmen Munuera, Federico J. Mompean, Daniel Vaquero, Jorge Quereda, Joao Elias F. S. Rodrigues, Jose A. Alonso, Eduardo Flores, Jose R. Ares, Isabel J. Ferrer, Abdullah M. Al-Enizi, Ayman Nafady, Sruthi Kuriakose, Joshua O. Island, Andres Castellanos-Gomez

Summary: We have developed a method to fabricate thermoelectric devices on office paper substrates using handcrafting techniques. The devices consist of thin films of WS2, Te, and BP (P-type semiconductors) and TiS3 and TiS2 (N-type semiconductors) deposited by rubbing these materials' powders onto the paper. The semiconducting films exhibit high Seebeck coefficients, reaching (+1.32 +/- 0.27) mV K-1 for WS2 and (-0.82 +/- 0.15) mV K-1 for TiS3. Peltier elements were also constructed by connecting the P- and N-type films with graphite electrodes, achieving a thermopower value of up to 6.11 mV K-1 when the Peltier element had three junctions. This work demonstrates the potential application of semiconducting van der Waals materials in thermoelectric power generation and low-cost disposable electronic devices.

ENERGY & ENVIRONMENTAL MATERIALS (2023)

Article Materials Science, Multidisciplinary

Untwining polar contributions from light-polarization dependent photovoltaic response of LuMnO3-based ferroelectric capacitors

Yunwei Sheng, Huan Tan, Alberto Quintana, Mario Villa, Jaume Gazquez, Ignasi Fina, Josep Fontcuberta

Summary: We report on the photovoltaic response of ferroelectric hexagonal LuMnO3 films using vertical capacitors, and find that the presence of electrodes crucially determines the sensitivity of short circuit current density to the ferroelectric polarization direction. Using ultrathin Pt top electrodes allows for a large short circuit current density, but polarization back-switching washes out the dependence on polarization direction.

ACTA MATERIALIA (2023)

Article Chemistry, Physical

Laser trimming for lithography-free fabrications of MoS2 devices

Yong Xie, Onur Cakiroglu, Wenshuai Hu, Kexin He, Sergio Puebla, Thomas Pucher, Qinghua Zhao, Xiaohua Ma, Carmen Munuera, Andres Castellanos-Gomez

Summary: A laser trimming method is used to separate single-layer MoS2 from thicker regions, allowing for the fabrication of single-layer MoS2 channels with regular geometry. Electrical characterization and scanning photocurrent microscopy confirm the effective insulation of the single-layer region. This direct-write and lithography-free method provides an alternative to reactive ion etching for patterning MoS2 and similar two-dimensional materials.

NANO RESEARCH (2023)

Article Chemistry, Multidisciplinary

Ferroelectric Hf0.5Zr0.5O2 films with improved endurance obtained through low temperature epitaxial growth on seed layers

Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Ignasi Fina, Florencio Sanchez

Summary: By using an ultrathin seed layer, high-quality epitaxial films of orthorhombic Hf0.5Zr0.5O2 can be obtained at a lower temperature, and they exhibit enhanced endurance.

NANOSCALE (2023)

Article Materials Science, Multidisciplinary

Pen Plotter as a Low-Cost Platform for Rapid Device Prototyping with Solution-Processable Nanomaterials

Gulsum Ersu, Yigit Sozen, Estrella Sanchez-Viso, Sruthi Kuriakose, Beatriz H. Juarez, Federico J. Mompean, Mar Garcia-Hernandez, Lea Visscher, Alvaro J. Magdaleno, Ferry Prins, Abdullah M. Al-Enizi, Ayman Nafady, Carmen Munuera, Joshua O. Island, Andres Castellanos-Gomez

Summary: The use of low-cost benchtop plotters combined with refillable writing pens and markers has been studied as an effective method to print nanomaterial-based inks on paper substrates. The approach is robust and precise, allowing for the printing of various solution-processable nanomaterials with narrow pattern features. The study also illustrates the versatility of this printing platform by successfully printing a range of materials with different properties.

ADVANCED ENGINEERING MATERIALS (2023)

Article Chemistry, Multidisciplinary

Large Magnetoresistance of Isolated Domain Walls in La2/3Sr1/3MnO3 Nanowires

Gloria Orfila, David Sanchez-Manzano, Ashima Arora, Fabian Cuellar, Sandra Ruiz-Gomez, Sara Rodriguez-Corvillo, Sandra Lopez, Andrea Peralta, Santiago J. Carreira, Fernando Gallego, Javier Tornos, Victor Rouco, Juan J. Riquelme, Carmen Munuera, Federico J. Mompean, Mar Garcia-Hernandez, Zouhair Sefrioui, Javier E. Villegas, Lucas Perez, Alberto Rivera-Calzada, Carlos Leon, Sergio Valencia, Jacobo Santamaria

Summary: Generation, manipulation, and sensing of magnetic domain walls are important for spintronic devices. La1-xSrxMnO3 (LSMO) manganites show promise due to their robust half-metallic ground state. However, the understanding of domain wall magnetoresistance is limited, with conflicting interpretations of experimental data. In this study, domain wall magnetoresistance is measured in LSMO nanowires, showing large values originating from spin accumulation. This non-adiabatic process has implications for future oxide spintronic sensors.

ADVANCED MATERIALS (2023)

Article Materials Science, Multidisciplinary

Band structure, superconductivity, and polytypism in AuSn4

Edwin Herrera, Beilun Wu, Evan O'Leary, Alberto M. Ruiz, Miguel Agueda, Pablo Garcia Talavera, Victor Barrena, Jon Azpeitia, Carmen Munuera, Mar Garcia-Hernandez, Lin-Lin Wang, Adam Kaminski, Paul C. Canfield, Jose J. Baldovi, Isabel Guillamon, Hermann Suderow

Summary: The orthorhombic compound AuSn4 is similar to the Dirac node arc semimetal PtSn4 in composition. Unlike PtSn4, AuSn4 is a superconductor with a critical temperature of T-c = 2.35 K. Recent measurements indicate quasi-two-dimensional superconducting behavior in AuSn4.

PHYSICAL REVIEW MATERIALS (2023)

Article Materials Science, Multidisciplinary

Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films

Alexandre Silva, Ignasi Fina, Florencio Sanchez, Jose P. B. Silva, Luis Marques, Veniero Lenzi

Summary: We investigated the influence of La content on the structural and ferroelectric properties of epitaxial HfO2 films. It was found that 2-5 at. % La-doped HfO2 films exhibit optimum remanent polarization and reduced coercive field. Density functional theory calculations supported the experimental results and revealed that the polarization switching in epitaxial La:HfO2 films can be understood based on the synergetic contribution of a non-ferroelectric monoclinic phase and La doping itself.

MATERIALS TODAY PHYSICS (2023)

Article Chemistry, Physical

Influence of ion irradiation on the surface electronic structure of epitaxial lanthanum nickelate films

Vishal Sharma, Inderpal Singh, Sunil K. Arora, Florencio Sanchez, Fouran Singh, Shilpa Tripathi, S. N. Jha

Summary: We investigated the impact of Ag15+ (200 MeV) ion irradiation on the surface electronic structure of epitaxial LaNiO3 films on (100) oriented LaAlO3 substrates by analyzing La (4d to 4f) and Ni (3p to 3d) photoemission transitions. Results showed slight enhancement in the spectral features for La (4d to 4f) transitions, but no enhancement for Ni (3p to 3d) transitions in both pristine and irradiated samples. Changes in constant initial state (CIS) spectra for La (4d to 4f) transitions and the presence of surface states near the Fermi level in Ni (3p to 3d) transitions were observed, with different ion doses associated with oxygen vacancies. Interestingly, the density of states (DOS) at the Fermi level in Ni (3p to 3d) transition spectra increased systematically with the irradiation dose, and a correlation between DOS at the Fermi level and surface states was found. The highest dose sample exhibited surface states with the highest DOS at the Fermi level, indicating an upward shift of surface states with increasing irradiation dose.

SURFACES AND INTERFACES (2023)

Article Nanoscience & Nanotechnology

Acrylates Polymerization on Covalent Plasma-Assisted Functionalized Graphene: A Route to Synthesize Hybrid Functional Materials

Roberto Munoz, Laia Leon-Boigues, Elena Lopez-Elvira, Carmen Munuera, Luis Vazquez, Federico Mompean, Jose Angel Martin-Gago, Irene Palacio, Mar Garcia-Hernandez

Summary: The modification of graphene surface with polymers allows for expanding its applications as a hybrid material. However, the chemical inertness of graphene poses a challenge for covalent functionalization. Researchers have developed a clean and scalable method to enhance the graphene chemical activity and synthesized a large-scale graphene-polymer hybrid material.

ACS APPLIED MATERIALS & INTERFACES (2023)

Article Chemistry, Inorganic & Nuclear

High-Temperature Synthesis of Ferromagnetic Eu3Ta3(O,N)9 with a Triple Perovskite Structure

Jhonatan R. Guarin, Carlos Frontera, Judith Oro-Sole, Jaume Gazquez, Clemens Ritter, Josep Fontcuberta, Amparo Fuertes

Summary: Europium tantalum perovskite oxynitrides were successfully prepared by a new high-temperature solid-state synthesis method. The crystal structure and magnetic properties of the materials can be tuned by different reactant mixtures and gas atmospheres. Among them, Eu3Ta3O3.66N5.34 is the first example of a triple perovskite oxynitride.

INORGANIC CHEMISTRY (2023)

Article Nanoscience & Nanotechnology

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Jose P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Begon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Iniguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sanchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder

Summary: Ferroelectric hafnium and zirconium oxides have shown significant progress in ultralow-power electronic systems, but technical limitations still hinder their application. This article aims to provide a comprehensive overview of the current state, challenges, and prospects for the development of these materials, with the collaboration of experts from different fields.

APL MATERIALS (2023)

Article Engineering, Electrical & Electronic

Robust Antiferromagnetic FeRh Films on Mica

Alberto Quintana, Carlos Zarco, Nico Dix, Florencio Sanchez, Ignasi Fina, Josep Fontcuberta

Summary: Flexible FeRh films of high crystalline quality can be synthesized by using mica as a substrate, followed by a mechanical exfoliation of the mica, which display a sharp antiferromagnetic to ferromagnetic phase transition. The films exhibit two distinguishable resistance states that can be written after a field-cooling procedure, and the memory states are robust under magnetic fields of up to 10 kOe.

ACS APPLIED ELECTRONIC MATERIALS (2023)

Article Engineering, Electrical & Electronic

Highly Stable Epitaxially Crystallized Ferroelectric Hf0.5Zr0.5O2 Films

Xueliang Lyu, Tingfeng Song, Alberto Quintana, Ignasi Fina, Florencio Sanchez

Summary: Cooling conditions have less impact on the phase stability of epitaxial Hf0.5Zr0.5O2 films, and the ferroelectric properties of the films are more stable compared to polycrystalline films.

ACS APPLIED ELECTRONIC MATERIALS (2023)

Article Engineering, Electrical & Electronic

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

Xiao Long, Huan Tan, Florencio Sanchez, Ignasi Fina, Josep Fontcuberta

Summary: The recent discovery of ferroelectricity in doped HfO2 has opened possibilities for the development of memristors based on ferroelectric switching. In this study, ferroelectricity and significant electro-resistance were observed in Hf0.5Zr0.5O2 tunnel junctions grown on Si. After a soft breakdown, where the resistance decreased by five orders of magnitude, ferroelectricity and electroresistance were still observed.

ACS APPLIED ELECTRONIC MATERIALS (2023)

暂无数据