期刊
CHEMISTRY OF MATERIALS
卷 21, 期 7, 页码 1173-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/cm8031187
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资金
- AFOSR [FA9550-08-1-0331]
- NSF MRSEC [DMR0520513]
Self-assembled nanodielectric multilayers are deposited from solution under ambient conditions using phosphonic-acid-functionalized precursors. The films exhibit excellent insulating properties, with capacitances approaching 700 nF/cm(2). Pentacene transistors fabricated with these gate dielectrics operate at very low voltages and exhibit hole mobilities of similar to 0.3 cm(2)/(V s).
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