3.9 Article

Low-Temperature MOCVD of Crystalline Ga2O3 Nanowires using tBu3Ga

期刊

CHEMICAL VAPOR DEPOSITION
卷 19, 期 10-12, 页码 347-354

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/cvde.201307060

关键词

Ga2O3; MOCVD; Nanowire growth; Photoluminescence

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  1. University of Duisburg-Essen

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Crystalline Ga2O3 nanowires are synthesized via an Au-catalyzed, as well as a self-catalyzed, growth by a low-temperature metal-organic (MO)CVD process using (Bu3Ga)-Bu-t as a novel Ga source. Morphology, elemental composition, and crystallinity of the resulting nanowires are analyzed by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and selected area electron diffraction (SAED). Photoluminescence (PL) spectra of the Ga2O3 nanowires show efficient defect-luminescence in the visible and UV ranges with blue and green emission peaks at 430nm and 512nm, respectively, at room temperature.

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