期刊
CHEMICAL VAPOR DEPOSITION
卷 18, 期 1-3, 页码 61-69出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cvde.201106949
关键词
ALD; Ni(dmamb)2; NiO; Ozone
资金
- imec industrial affiliate program
- TEL-imec joint development program on RRAM materials
NiO thin films are deposited by atomic layer deposition (ALD) from the Ni(dmamb)2 (dmamb=1-dimethylamino-2-methyl-2-butanolate) precursor using O3 as the oxidizer. The films are analyzed for wafer uniformity, structure, composition, morphology, microstructure, and homogeneity. The Ni(dmamb)2 half-cycle shows an initial rapid partial saturation followed by slower further adsorption. By contrast, the O3 half-cycle shows good saturation behavior. In the studied deposition temperature range for ALD, the films are polycrystalline with negligible amounts of carbon in the films. Furthermore, the films are homogeneous in thickness and composition, demonstrating that high-quality NiO films can be deposited by ALD from Ni(dmamb)2.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据