4.6 Article

Model non-linear nano-electronic device

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CHEMICAL PHYSICS LETTERS
卷 460, 期 1-3, 页码 220-224

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ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2008.06.006

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We show a simple model for a non-linear nano-electronic device displaying a range of current-voltage characteristics including negative differential resistance, multistability and rectification. The tight-binding model for the device consists of a pair of coupled quantum dots attached to two semi-infinite linear mono-atomic chains. Non-linearity is introduced via electron-electron coulomb repulsion through an onsite Hubbard U. We study the mean-field electronic structure of the device as a function of applied potential difference for a range of values of the intra-device coupling and coupling to the leads. (C) 2008 Elsevier B.V. All rights reserved.

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