期刊
CHEMICAL COMMUNICATIONS
卷 49, 期 92, 页码 10862-10864出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cc46684a
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-09ER46600]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- National Science Foundation [OCI-105375]
Oxidation of Cu occurs via Cu2O islanding on an oxide wetting layer at a critical thickness of two atomic layers. The transition from 2D wetting-layer growth to 3D oxide islanding is driven energetically arising from the Cu-Cu2O interfacial interaction.
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