Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

Crystal TaS2 nanobelt arrays were fabricated on Ta wafers by a two-step method. Field-emission measurements show that the nanobelt arrays are decent field emitters with a turn-on field of similar to 0.7 V mu m(-1), a threshold field of similar to 2.1 V mu m(-1), and a field enhancement factor of similar to 4.33 x 10(4).