期刊
CERAMICS INTERNATIONAL
卷 40, 期 7, 页码 9791-9797出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2014.02.067
关键词
Optical properties; Deposition; PECVD; Silicon carbide; Thin film
资金
- National Natural Science Foundation of China [61366004]
- R&D Project for Industrial Applications [DCL201104]
- Frontier Research Project of Shanghai Normal University [DYL701]
- Science and Technology Commission of Shanghai Municipality [10160503300]
- Innovation Program of Shanghai Municipal Education Commission [09YZ151]
Hydrogenated amorphous silicon carbide (a-Sic,c:H) thin films were deposited using a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system with methane (CH4) and silane (SiH4) as reactive precursor gases and H-2 as a carrier and dilution gas. The effects of RF-PECVD deposition conditions on the optical properties and microstructural characteristics of a-SiCx:H thin films were systematically investigated. When the RF power density, deposition pressure (P) and temperature (T-s) were fixed, the refractive index (n) and the growth rate of a-SiCx:H thin films decreased with the CH4/SiH4 flow rate ratio (R), while their optical band gap (4) increased with R. The aSiC(x):H thin film grown at higher R was found to be smoother than that grown at lower R. When the RF power density, P and R were fixed, the growth rate of a-SiCx:H thin films decreased with Ts, while their n increased with T. It was found that E-g slightly increased with Ts, and the film became rough at higher T. When Ts, P and R were fixed, the growth rate of a-SiCx:H thin films increased with the RE power density, while their n only slightly increased and Eg slightly decreased with the RE power density. It was found that the RE power density had a large impact on the roughness of a-SiCx:H thin films. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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