Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC

标题
Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC
作者
关键词
-
出版物
CARBON
Volume 49, Issue 2, Pages 631-635
出版商
Elsevier BV
发表日期
2010-10-18
DOI
10.1016/j.carbon.2010.10.009

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