期刊
CARBON
卷 48, 期 9, 页码 2671-2673出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2010.03.072
关键词
-
资金
- II-VI Foundation [2009-2010]
Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 degrees C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak. (C) 2010 Elsevier Ltd. All rights reserved.
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