Dislocation generation at near-coincidence site lattice grain boundaries during silicon directional solidification

标题
Dislocation generation at near-coincidence site lattice grain boundaries during silicon directional solidification
作者
关键词
A1. Defects, A1. Solidification, A2. Seeded growth, B1. Multicrystalline silicon
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 411, Issue -, Pages 12-18
出版商
Elsevier BV
发表日期
2014-11-07
DOI
10.1016/j.jcrysgro.2014.10.054

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