Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

Resistive Switching Characteristics of Tm$_{2}$O $_{3}$, Yb$_{2}$O $_{3}$, and Lu$_{2}$O$_{3}$-Based Metal–Insulator–Metal Memory Devices

(2012) Tung-Ming Pan et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Effect of annealing temperature on resistance switching behavior of Mg0.2Zn0.8O thin films deposited on ITO glass

(2012) Shu-ming Gao et al.   SOLID-STATE ELECTRONICS

Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

(2011) Tuo-Hung Hou et al.   APPLIED PHYSICS LETTERS

Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

(2011) Chun-Chieh Lin et al.   IEEE TRANSACTIONS ON MAGNETICS

Bipolar resistance switching in chalcogenide materials

(2011) Annie Pradel et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Resistive switching behaviors of ZnO nanorod layers

(2010)   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3

(2009) Haiyang Peng et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of MnOx-based ReRAM

(2009) Sen Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS

Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications

(2008) Lee-Eun Yu et al.   IEEE ELECTRON DEVICE LETTERS