期刊
JOURNAL OF CHEMICAL PHYSICS
卷 143, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4935366
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资金
- Office of Naval Research [N00014-12-1-0530]
- National Science Foundation [CHE-1111557]
Thermal modeling and numerical simulations have been performed to describe the ultrafast thermal response of band gap materials upon optical excitation. A model was established by extending the conventional two-temperature model that is adequate for metals, but not for semiconductors. It considers the time-and space-dependent density of electrons photoexcited to the conduction band and accordingly allows a more accurate description of the transient thermal equilibration between the hot electrons and lattice. Ultrafast thermal behaviors of bismuth, as a model system, were demonstrated using the extended two-temperature model with a view to elucidating the thermal effects of excitation laser pulse fluence, electron diffusivity, electron-hole recombination kinetics, and electron-phonon interactions, focusing on high-density excitation. (C) 2015 AIP Publishing LLC.
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