4.6 Article

Electron doping through lithium intercalation to interstitial channels in tetrahedrally bonded SiC

期刊

JOURNAL OF APPLIED PHYSICS
卷 118, 期 17, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4934865

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  1. project Materials Design through Computics by Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
  2. Computational Materials Science Initiative by MEXT, Japan
  3. Grants-in-Aid for Scientific Research [22104001] Funding Source: KAKEN

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We report on first-principles calculations that clarify the effect of lithium atom intercalation into zinc blende 3C-silicon carbide (3C-SiC) on electronic and structural properties. Lithium atoms inside 3C-SiC are found to donate electrons to 3C-SiC that is an indication of a new way of electron doping through the intercalation. The electrons doped into the conduction band interact with lithium cations and reduce the band spacing between the original valence and conduction bands. We have also found that a silicon monovacancy in 3C-SiC promotes the lithium intercalation, showing that the vacancy generation makes SiC as a possible anode material for lithium-ion battery. (C) 2015 AIP Publishing LLC.

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