期刊
JOURNAL OF APPLIED PHYSICS
卷 118, 期 4, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.4927749
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2011-0017486, 2012R1A4A1029061]
- National Research Foundation of Korea [21A20131100006, 2011-0017486] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor. (C) 2015 AIP Publishing LLC.
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