期刊
JOURNAL OF APPLIED PHYSICS
卷 117, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4918536
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资金
- National Natural Science Foundation of China [11174216]
- Research Fund for the Doctoral Program of Higher Education [20120032110065]
We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Omega/square at 2K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility mu(q) owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer. (C) 2015 AIP Publishing LLC.
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