期刊
APPLIED SURFACE SCIENCE
卷 285, 期 -, 页码 324-330出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2013.07.168
关键词
IrO2 thin films; Thermal stability; Low oxygen pressure; Pulsed laser deposition
类别
资金
- Natural Science Foundation of Hubei Province of China [2011CDB331]
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology)
- Fundamental Research Funds for National University
- China University of Geosciences (Wuhan) [CUG120118]
Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (P-O2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at P-O2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 mu Omega cm increased with annealing temperature at P-O2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation. (C) 2013 Elsevier B.V. All rights reserved.
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