Effects of ZnO buffer layer on GZO RRAM devices

标题
Effects of ZnO buffer layer on GZO RRAM devices
作者
关键词
-
出版物
APPLIED SURFACE SCIENCE
Volume 258, Issue 10, Pages 4588-4591
出版商
Elsevier BV
发表日期
2012-01-21
DOI
10.1016/j.apsusc.2012.01.034

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started