期刊
APPLIED SURFACE SCIENCE
卷 257, 期 6, 页码 1979-1985出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2010.09.038
关键词
Dense plasma focus; Amorphization; Nitrogen doping
类别
资金
- National Institute of Education/Nanyang Technological University, Singapore [RI 7/08/RSR]
- NIE/NTU
Pulsed laser deposition synthesized ZnO thin films, grown at 400 degrees C substrate temperature in different oxygen gas pressures, were irradiated with 6 shots of pulsed nitrogen ions obtained from 2.94 kJ dense plasma focus to achieve the nitrogen doping in ZnO. Structural, compositional and optical properties of as-deposited and nitrogen ion irradiated ZnO thin films were investigated to confirm the successful doping of nitrogen in irradiated samples. Spectral changes have been seen in the nitrogen irradiated ZnO thin film samples from the low temperature PL measurements. Free electron to acceptor emissions can be observed from the irradiated samples, which hints towards the successful nitrogen doping in films. Compositional analysis by X-ray photoelectron spectroscopy and corresponding shifts in binding energy core peaks of oxygen and nitrogen confirmed the successful use of plasma focus device as a novel source for nitrogen ion doping in ZnO thin films. (C) 2010 Elsevier B.V. All rights reserved.
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