期刊
APPLIED SURFACE SCIENCE
卷 257, 期 10, 页码 4685-4688出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.12.122
关键词
ZnO homojunction; Arsenic; Light-emitting diode; Metal organic chemical vapor deposition
类别
资金
- National Natural Science Foundation of China [60576054, 50532080, 61076046, 60877020, 60976010]
In this paper, we proposed a new p-type ZnO doping method with metal organic chemical vapor deposition (MOCVD) technology by inserting a GaAs interlayer between substrate and ZnO epitaxial layer. The doping concentration of p-type ZnO film is able to be controlled by adjusting the thickness of the GaAs interlayer. With this method, we fabricated n-ZnO/p-ZnO: As homojunction light-emitting diode (LED) on ITO-glass substrate pre-coated with 20 nm GaAs interlayer. The device exhibits a typical rectifying behavior by current-voltage (I-V) measurement. When the device is forward biased, UV-vis electroluminescence (EL) emissions can be observed clearly. (C) 2010 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据