期刊
APPLIED SURFACE SCIENCE
卷 256, 期 14, 页码 4734-4737出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2010.02.083
关键词
ZnO; Thermal stability; Molecular-beam epitaxy; II-VI semiconductors; X-ray diffraction; Photoluminescence
类别
资金
- UC Micro/ZN Technology Inc.
- ARO-YIP [W911NF-08-1-0432]
CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39 eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 degrees C in situ annealing. CdZnO thin films evolve from pure wurtzite (wz) structure, to mixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was performed on in situ annealed CdZnO samples. Pure wz CdZnO shows insignificant NBE PL peak shift after RTA, while mixture structure CdZnO shows evident blue shifts due to phase change after annealing, indicating the rs phase CdZnO changes to wz phase CdZnO during RTA process. (C) 2010 Elsevier B. V. All rights reserved.
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