期刊
APPLIED SURFACE SCIENCE
卷 256, 期 21, 页码 6153-6156出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2010.03.051
关键词
MgZnO; Photodetector; Heterojunction; Ultraviolet/visible rejection ratio
类别
资金
- National Natural Science Foundation of China [50772016]
We report on the fabrication and characterization of MgZnO/SiO2/n-Si structured photodetectors, for the visible-blind monitoring. The current-voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible rejection ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO2 layer will be discussed in terms of the band diagrams of the heterojunctions. Published by Elsevier B.V.
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