期刊
APPLIED SURFACE SCIENCE
卷 256, 期 2, 页码 460-464出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2009.07.016
关键词
Scanning tunneling microscopy; Bismuth; Nanowire
We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(1 1 1) with average lateral width from 9 to 20 nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(1 1 0) plane. The Bi nanowires grow along Bi[1 (1) over bar0] direction and align with the [1 (1) over bar0] directions on Ag(1 1 1). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(1 1 0) which saturates the dangling bonds and lowers the total energy. (C) 2009 Elsevier B.V. All rights reserved.
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