4.7 Article Proceedings Paper

Epitaxial growth of Bi thin films on Ge(111)

期刊

APPLIED SURFACE SCIENCE
卷 256, 期 4, 页码 1252-1256

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2009.05.079

关键词

Low-energy electron diffraction; Scanning tunneling microscopy; Thin film growth; Bismuth; Ge(111)

资金

  1. Grants-in-Aid for Scientific Research [21340083] Funding Source: KAKEN

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We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2 x 1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1 x 1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1). (C) 2008 Elsevier B. V. All rights reserved.

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