Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack

出版年份 2009 全文链接

标题

Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack

作者

关键词

-

出版物

APPLIED SURFACE SCIENCE

Volume 255, Issue 16, Pages 7179-7182

出版商

Elsevier BV

发表日期

2009-03-26

DOI

10.1016/j.apsusc.2009.03.055

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