期刊
APPLIED SURFACE SCIENCE
卷 254, 期 7, 页码 2146-2149出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2007.08.092
关键词
MgxZn1-xO; band gap; Raman; electrical properties
MgxZn1-xO alloy films were prepared on sapphire substrates using Ar and N-2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the MgxZn1-xO films was studied. By using N-2 as the sputtering gas, the MgxZn1-xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping. (C) 2007 Elsevier B.V. All rights reserved.
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