A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics

Device Process and Circuit Application Interaction for Harsh Electronics: Hf–In–Zn–O Thin Film Transistors as an Example

(2017) Chih-Hsiang Ho et al.   IEEE ELECTRON DEVICE LETTERS

Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors With HfxZr1–xOy Thin Films

(2017) Yifei Mu et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

(2017) Xiaobing Yan et al.   Journal of Materials Chemistry C

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

(2017) Xiaobing Yan et al.   Journal of Materials Chemistry C

Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

(2016) Debanjan Jana et al.   APPLIED PHYSICS LETTERS

Study on electrical defects level in single layer two-dimensional Ta2O5

(2016) Dahai Li et al.   Chinese Physics B

Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

(2016) Yifei Mu et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

(2014) Runchen Fang et al.   APPLIED PHYSICS LETTERS

Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure

(2014) X. B. Yan et al.   APPLIED PHYSICS LETTERS

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlOx/Pt RRAM device

(2014) Fang Yuan et al.   Nanoscale Research Letters

Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors

(2013) Senol Kaya et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Solar-Blind Photodetectors for Harsh Electronics

(2013) Dung-Sheng Tsai et al.   Scientific Reports

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

(2012) Zhong Qiang Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Modeling for multilevel switching in oxide-based bipolar resistive memory

(2012) Ji-Hyun Hur et al.   NANOTECHNOLOGY

Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p–i–n diode

(2012) Vinu R.V. Pillai et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory

(2011) Lijie Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Intrinsic Mechanisms of Memristive Switching

(2011) Kazuki Nagashima et al.   NANO LETTERS

Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films

(2010) X. B. Yan et al.   APPLIED PHYSICS LETTERS

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices

(2010) Brian Butcher et al.   NANOTECHNOLOGY

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS

Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching properties

(2008) Woo-Young Yang et al.   THIN SOLID FILMS