期刊
APPLIED PHYSICS LETTERS
卷 104, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4871870
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资金
- Industrial Strategic Technology Development Program Development of WPE 75% LED device process and standard evaluation technology - Ministry of Trade, Industry, and Energy, Republic of Korea [10041878]
- National Research Foundation of Korea [22A20130000133] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device. (C) 2014 AIP Publishing LLC.
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