The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Hybrid functional calculations ofDXcenters in AlN and GaN

(2014) L. Gordon et al.   PHYSICAL REVIEW B

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

(2013) Benjamin E. Gaddy et al.   APPLIED PHYSICS LETTERS

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

(2013) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride

(2013) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

(2012) Yoshinao Kumagai et al.   Applied Physics Express

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

(2012) Toru Nagashima et al.   Applied Physics Express

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

(2012) Toru Kinoshita et al.   Applied Physics Express

Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN

(2012) A. Sedhain et al.   APPLIED PHYSICS LETTERS

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Concentration of point defects in wurtzite AlN: A hybrid functional study

(2012) Leonardo Silvestri et al.   EPL

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Ultraviolet luminescence in AlN

(2011) T. Schulz et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Identification of theVAl-ONdefect complex in AlN single crystals

(2011) J.-M. Mäki et al.   PHYSICAL REVIEW B

C and Si codoping method for p-type AlN

(2010) Honglei Wu et al.   JOURNAL OF APPLIED PHYSICS

Growth of AlN single crystalline boules

(2010) Z.G. Herro et al.   JOURNAL OF CRYSTAL GROWTH

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy

(2009) Barbara Bastek et al.   APPLIED PHYSICS LETTERS

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Seeded growth of AlN bulk crystals in m- and c-orientation

(2009) P. Lu et al.   JOURNAL OF CRYSTAL GROWTH

Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations

(2008) P. Lu et al.   APPLIED PHYSICS LETTERS