AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

(2014) Eiji Nakamura et al.   APPLIED PHYSICS LETTERS

Field-effect transistors based on cubic indium nitride

(2014) Masaaki Oseki et al.   Scientific Reports

Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

(2013) Kana Okubo et al.   APPLIED PHYSICS LETTERS

Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates

(2013) Xu-Qiang Shen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

(2012) Nethaji Dharmarasu et al.   Applied Physics Express

Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

(2012) Philipp Drechsel et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

(2009) Kazuhiro Sato et al.   Applied Physics Express

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

(2009) F Reiher et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

(2008) Benjamin Damilano et al.   Applied Physics Express

Atomic Arrangement at the AlN/Si(110) Interface

(2008) Oscar E. Contreras et al.   Applied Physics Express

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

(2008) Yvon Cordier et al.   IEEE ELECTRON DEVICE LETTERS