期刊
APPLIED PHYSICS LETTERS
卷 105, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4901193
关键词
-
资金
- TomKat Center for Sustainable Energy of Stanford University
- Solar Energy Research Institute for India and the United States (SERIIUS) under the U.S.-India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute [DE-AC36-08GO28308]
- Government of India through the Department of Science and Technology [IUSSTF/JCERDC-SERIIUS/2012]
We report the experimental demonstration of Fermi level depinning using nickel oxide ( NiO) as the insulator material in metal-insulator-semiconductor ( M- I- S) contacts. Using this contact, we show less than 0.1 eV barrier height for holes in platinum/ NiO/ silicon ( Pt/ NiO/ p- Si) contact. Overall, the pinning factor was improved from 0.08 ( metal/ Si) to 0.26 ( metal/ NiO/ Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors. (c) 2014 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据