Reduction of low frequency magnetic noise by voltage-induced magnetic anisotropy modulation in tunneling magnetoresistance sensors

Magnetic field sensing characteristics of MgO based tunneling magnetoresistance devices with Co40Fe40B20 and Co60Fe20B20 electrodes

(2013) P. Wiśniowski et al.   SENSORS AND ACTUATORS A-PHYSICAL

Magnetic field sensor with voltage-tunable sensing properties

(2012) Witold Skowroński et al.   APPLIED PHYSICS LETTERS

Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

(2012) Jian Zhu et al.   PHYSICAL REVIEW LETTERS

Electric-field-assisted switching in magnetic tunnel junctions

(2011) Wei-Gang Wang et al.   NATURE MATERIALS

Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

(2010) M. Endo et al.   APPLIED PHYSICS LETTERS

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Low frequency magnetoresistive noise in spin-valve structures

(2009) A. Ozbay et al.   APPLIED PHYSICS LETTERS

Critical challenges for picoTesla magnetic-tunnel-junction sensors

(2009) W.F. Egelhoff et al.   SENSORS AND ACTUATORS A-PHYSICAL

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

(2008) S. Ikeda et al.   APPLIED PHYSICS LETTERS

Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature

(2008) S. H. Liou et al.   JOURNAL OF APPLIED PHYSICS

Effect of free layer thickness and shape anisotropy on the transfer curves of MgO magnetic tunnel junctions

(2008) P. Wiśniowski et al.   JOURNAL OF APPLIED PHYSICS