High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

(2014) Useong Kim et al.   APL Materials

Large effects of dislocations on high mobility of epitaxial perovskite Ba0.96La0.04SnO3 films

(2013) Hyosik Mun et al.   APPLIED PHYSICS LETTERS

Origin of the superior conductivity of perovskite Ba(Sr)SnO3

(2013) Heng-Rui Liu et al.   APPLIED PHYSICS LETTERS

High Mobility in a Stable Transparent Perovskite Oxide

(2012) Hyung Joon Kim et al.   Applied Physics Express

High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

(2012) X. Luo et al.   APPLIED PHYSICS LETTERS

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2on sapphire

(2012) S. K. Vasheghani Farahani et al.   PHYSICAL REVIEW B

Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

(2012) Hyung Joon Kim et al.   PHYSICAL REVIEW B

Characteristics of SrTiO3Field-Effect Transistors with DyScO3Gate Insulators

(2011) Kazunori Nishio et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

(2010) Changdeuck Bae et al.   ACS Applied Materials & Interfaces

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

(2010) Wolfgang L. Kalb et al.   PHYSICAL REVIEW B

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

(2009) G. Łupina et al.   MICROELECTRONIC ENGINEERING

High-mobility transparent thin-film transistors with an Sb-doped SnO2nanocrystal channel fabricated at room temperature

(2009) Jia Sun et al.   NANOTECHNOLOGY

Photoconductivity in BiFeO3 thin films

(2008) S. R. Basu et al.   APPLIED PHYSICS LETTERS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS