Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray reflectivity study

Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO2Film

(2014) Yi-Lung Cheng et al.   ECS Journal of Solid State Science and Technology

Study on Gallium Nitride-Based Metal–Oxide–Semiconductor Capacitors With RF Magnetron Sputtered $\hbox{Y}_{2}\hbox{O}_{3}$ Gate

(2012) Hock Jin Quah et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of Hydrophilic Si Direct Bonding with Ultraviolet Ozone Activation for 3D Integration

(2012) J. Fan et al.   ECS Journal of Solid State Science and Technology

Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered AmorphousTiO2Films

(2012) M. Chandra Sekhar et al.   Journal of Spectroscopy

Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface Properties

(2011) Bongmook Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering

(2009) Jiang Ran et al.   CHINESE PHYSICS LETTERS