期刊
APPLIED PHYSICS LETTERS
卷 105, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4898672
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资金
- JST-ALCA
- JSAP through FIRST Program
- CSTP
We show that in Si-on-insulator (SOI) nanofilms (NFs), phonon-confinement-induced longitudinal optical (LO) phonon Raman band asymmetric broadening is much weaker than thickness-inversely-proportional symmetric broadening associated with phonon lifetime reduction. We discuss the origin of the effect, determine LO phonon lifetime in SOI NFs and modify Richter-Campbell-Fauchet model describing the confined-phonon Raman band shape by taking the symmetric broadening into account. We also discuss connection of the effect with SOI NF thermal conductivity reduction. (C) 2014 AIP Publishing LLC.
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