4.6 Article

Ultraviolet Raman spectra of few nanometer thick silicon-on-insulator nanofilms: Lifetime reduction of confined phonons

期刊

APPLIED PHYSICS LETTERS
卷 105, 期 15, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4898672

关键词

-

资金

  1. JST-ALCA
  2. JSAP through FIRST Program
  3. CSTP

向作者/读者索取更多资源

We show that in Si-on-insulator (SOI) nanofilms (NFs), phonon-confinement-induced longitudinal optical (LO) phonon Raman band asymmetric broadening is much weaker than thickness-inversely-proportional symmetric broadening associated with phonon lifetime reduction. We discuss the origin of the effect, determine LO phonon lifetime in SOI NFs and modify Richter-Campbell-Fauchet model describing the confined-phonon Raman band shape by taking the symmetric broadening into account. We also discuss connection of the effect with SOI NF thermal conductivity reduction. (C) 2014 AIP Publishing LLC.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据