4.6 Article

Van der Waals epitaxial growth of topological insulator Bi2-xSbxTe3-ySey ultrathin nanoplate on electrically insulating fluorophlogopite mica

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APPLIED PHYSICS LETTERS
卷 105, 期 6, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4892576

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  1. Institute for Molecular Science
  2. World Premier International Research Center Initiative (WPI), MEXT
  3. [23740251]
  4. Grants-in-Aid for Scientific Research [25287068, 25630272] Funding Source: KAKEN

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We report the growth of high quality Bi2-xSbxTe3-ySey ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size, and the composition of the BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of the BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates a robust Dirac cone carrier transport in the BSTS-NPs. Since the BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, the BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future. (C) 2014 AIP Publishing LLC.

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