期刊
APPLIED PHYSICS LETTERS
卷 105, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4895931
关键词
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资金
- SCIEX Project [12.372]
- Czech Science Foundation [14-15357S]
- EU-FP7 Fast Track Project - European Commission [283501]
- [LM2011026]
In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (mu c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman tnicro-spectroscopy at excitation wavelengths of 442 nm, 514 nm, 633 nm, and 785 nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the mu c-Si:H absorber layer, we find significant differences in the absolute Raman intensity, measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the pc-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed. (C) 2014 AIP Publishing LLC.
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