期刊
APPLIED PHYSICS LETTERS
卷 105, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4893944
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资金
- University Grants Commission (UGC), India
- Technical Quality Improvement Program (TEQIP)
- World Bank
- Department of Information Technology (DIT), India
- DST Purse program of the Department of Science and Technology, India
In this work, n-ZnO-nanowire/p-Si junction diodes have been fabricated and characterized both physically as well as electrically. The measurements are performed on a single standalone nanowire diode for the investigation of electrical transport through the nano-junction. The rectification properties of the single n-ZnO nanowire/p-Si diode have been studied for various input waveforms and frequencies. The diodes exhibit very promising rectification as well as switching behavior with no charge storage effect and consequently, a switching time as small as similar to 1 ms has been achieved. (C) 2014 AIP Publishing LLC.
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