期刊
APPLIED PHYSICS LETTERS
卷 104, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4875902
关键词
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资金
- NSF-IUCRC Center for Dielectric Studies at Pennsylvania State
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-07ER46417]
- NSF [DMS-1215066]
- Computational Materials and Chemical Sciences Network (CMCSN)
A self-consistent model has been proposed to study the switchable current-voltage (I-V) characteristics in Cu/BaTiO3/Cu sandwiched structure combining the phase-field model of ferroelectric domains and diffusion equations for ionic/electronic transport. The electrochemical transport equations and Ginzburg-Landau equations are solved using the Chebyshev collocation algorithm. We considered a single parallel plate capacitor configuration which consists of a single layer BaTiO3 containing a single tetragonal domain orientated normal to the plate electrodes (Cu) and is subject to a sweep of ac bias from -1.0 to 1.0V at 25 degrees C. Our simulation clearly shows rectifying I-V response with rectification ratios amount to 10(2). The diode characteristics are switchable with an even larger rectification ratio after the polarization direction is flipped. The effects of interfacial polarization charge, dopant concentration, and dielectric constant on current responses were investigated. The switchable I-V behavior is attributed to the polarization bound charges that modulate the bulk conduction. (C) 2014 AIP Publishing LLC.
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