4.6 Article

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

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APPLIED PHYSICS LETTERS
卷 104, 期 20, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4879463

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资金

  1. Vice-Chancellor's Research Program [SIR50/PS26746]
  2. Faculty of Science Research Grant [IR001/PS30560]
  3. ARC [FT100100956, DP110105338]

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We report the magnetic and magnetotransport properties of (In0.985Nd0.015)(2)O-2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (similar to 29.2%) was observed at 5K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)(2)O-2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. (C) 2014 AIP Publishing LLC.

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